BGB 540 E6327 related parameters_BGB 540 E6327 PDF documentation_Infineon Technologies

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	3.5V
Frequency - Transition	-
Noise Figure (dB Typ @ f)	1.3dB ~ 2dB @ 900MHz ~ 1.8GHz
Gain	16dB ~ 17.5dB
Power - Max	120mW
DC Current Gain (hFE) (Min) @ Ic, Vce	-
Current - Collector (Ic) (Max)	30mA
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	SC-82A, SOT-343
Supplier Device Package	PG-SOT343-4

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