0204-125 related parameters_0204-125 PDF documentation_Microsemi Corporation

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	60V
Frequency - Transition	225MHz ~ 400MHz
Noise Figure (dB Typ @ f)	-
Gain	7dB ~ 8.5dB
Power - Max	270W
DC Current Gain (hFE) (Min) @ Ic, Vce	20 @ 1A, 5V
Current - Collector (Ic) (Max)	16A
Operating Temperature	200°C (TJ)
Mounting Type	Chassis Mount
Package / Case	55JT
Supplier Device Package	55JT

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