NE68519-A related parameters_NE68519-A PDF documentation_CEL

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	6V
Frequency - Transition	12GHz
Noise Figure (dB Typ @ f)	1.5dB @ 2GHz
Gain	11dB
Power - Max	125mW
DC Current Gain (hFE) (Min) @ Ic, Vce	75 @ 10mA, 3V
Current - Collector (Ic) (Max)	30mA
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	SOT-523
Supplier Device Package	SOT-523

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