JANTXV2N4957UB related parameters_JANTXV2N4957UB PDF documentation_Microsemi Corporation

Transistors - Bipolar - RF

The picture is for reference only

Please fill in the inquiry information for purchasing and consulting products

PartName*	Quantity*	Batch Number	Package	Manufacturer	Other requirements

Please fill in the contact details and reply to you in 3 minutes

In Stock：19,280(Ref. price)

Qty.	Unit Price	Ext. Price
No price, please contact inquiry

Qty：

Add inquiry Quick quote

Related products

Documents

Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	PNP
Voltage - Collector Emitter Breakdown (Max)	30V
Frequency - Transition	-
Noise Figure (dB Typ @ f)	3.5dB @ 450MHz
Gain	25dB
Power - Max	200mW
DC Current Gain (hFE) (Min) @ Ic, Vce	30 @ 5mA, 10V
Current - Collector (Ic) (Max)	30mA
Operating Temperature	-65°C ~ 200°C (TJ)
Mounting Type	Surface Mount
Package / Case	3-SMD, No Lead
Supplier Device Package	UB

Other

Price advantage, JANTXV2N4957UB is available in stock and can be delivered on the same day

Recommended Product

Part No	Manufacturer	Product Category	Datasheet	Description	Reference price	Quantity
BF959G	ON Semiconductor	Transistors - Bipolar - RF	Datasheet	RF SMALL SIGNAL TRANSISTOR	$0.05760	In Stock:18038
23A025	Microsemi Corporation	Transistors - Bipolar - RF	Datasheet	RF TRANS NPN 22V 3.7GHZ 55BT	No price	In Stock:18042
1D2209NK005U7742	Infineon Technologies	Transistors - Bipolar - RF	Datasheet	POWER RECTIFIER DIODE	$5.44350	In Stock:18044
MMBTH11	ON Semiconductor	Transistors - Bipolar - RF	Datasheet	RF TRANS NPN 25V 650MHZ SOT23-3	No price	In Stock:18046
UPA801T-A	CEL	Transistors - Bipolar - RF	Datasheet	RF TRANS 2 NPN 12V 4.5GHZ SOT363	No price	In Stock:18048