CP229-2N5109-CT20 related parameters_CP229-2N5109-CT20 PDF documentation_Central Semiconductor Corp

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	20V
Frequency - Transition	1.2GHz
Noise Figure (dB Typ @ f)	3dB @ 200MHz
Gain	11dB
Power - Max	-
DC Current Gain (hFE) (Min) @ Ic, Vce	40 @ 50mA, 15V
Current - Collector (Ic) (Max)	400mA
Operating Temperature	-65°C ~ 200°C (TJ)
Mounting Type	Surface Mount
Package / Case	Die
Supplier Device Package	Die

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