NE68719-T1 related parameters_NE68719-T1 PDF documentation_CEL

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)Cut Tape (CT)
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	3V
Frequency - Transition	11GHz
Noise Figure (dB Typ @ f)	1.3dB ~ 2dB @ 2GHz
Gain	-
Power - Max	90mW
DC Current Gain (hFE) (Min) @ Ic, Vce	70 @ 20mA, 2V
Current - Collector (Ic) (Max)	30mA
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	SOT-523
Supplier Device Package	3-SuperMiniMold (19)

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