MDS1100 related parameters_MDS1100 PDF documentation_Microsemi Corporation

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	65V
Frequency - Transition	1.03GHz
Noise Figure (dB Typ @ f)	-
Gain	8.9dB
Power - Max	8750W
DC Current Gain (hFE) (Min) @ Ic, Vce	20 @ 5A, 5V
Current - Collector (Ic) (Max)	100A
Operating Temperature	200°C (TJ)
Mounting Type	Surface Mount
Package / Case	55TU-1
Supplier Device Package	55TU-1

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