NESG2031M05-T1-A related parameters_NESG2031M05-T1-A PDF documentation_Renesas Electronics America Inc

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	5V
Frequency - Transition	25GHz
Noise Figure (dB Typ @ f)	0.8dB ~ 1.3dB @ 2GHz ~ 5.2GHz
Gain	10dB ~ 17dB
Power - Max	175mW
DC Current Gain (hFE) (Min) @ Ic, Vce	130 @ 5mA, 2V
Current - Collector (Ic) (Max)	35mA
Operating Temperature	-
Mounting Type	Surface Mount
Package / Case	SOT-343F
Supplier Device Package	M05

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