2001 related parameters_2001 PDF documentation_Microsemi Corporation

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	50V
Frequency - Transition	2GHz
Noise Figure (dB Typ @ f)	-
Gain	9.5dB
Power - Max	5W
DC Current Gain (hFE) (Min) @ Ic, Vce	20 @ 100mA, 5V
Current - Collector (Ic) (Max)	250mA
Operating Temperature	-
Mounting Type	Chassis Mount
Package / Case	55BT
Supplier Device Package	55BT

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