UPA812T-A related parameters_UPA812T-A PDF documentation_CEL

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	2 NPN (Dual)
Voltage - Collector Emitter Breakdown (Max)	10V
Frequency - Transition	7GHz
Noise Figure (dB Typ @ f)	1.4dB @ 1GHz
Gain	12dB
Power - Max	200mW
DC Current Gain (hFE) (Min) @ Ic, Vce	70 @ 7mA, 3V
Current - Collector (Ic) (Max)	65mA
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	6-TSSOP, SC-88, SOT-363
Supplier Device Package	SOT-363

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