CP302-MPSH10-WN related parameters_CP302-MPSH10-WN PDF documentation_Central Semiconductor Corp

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Box
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	25V
Frequency - Transition	650MHz
Noise Figure (dB Typ @ f)	-
Gain	-
Power - Max	350mW
DC Current Gain (hFE) (Min) @ Ic, Vce	60 @ 4mA, 10V
Current - Collector (Ic) (Max)	-
Operating Temperature	-65°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	Die
Supplier Device Package	Die

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