NE851M33-A related parameters_NE851M33-A PDF documentation_CEL

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	5.5V
Frequency - Transition	4.5GHz
Noise Figure (dB Typ @ f)	1.9dB ~ 2.5dB @ 2GHz
Gain	-
Power - Max	130mW
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 5mA, 1V
Current - Collector (Ic) (Max)	100mA
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	3-SMD, Flat Lead
Supplier Device Package	3-SuperMiniMold (M33)

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