2SC4853A-4-TL-E related parameters_2SC4853A-4-TL-E PDF documentation_ON Semiconductor

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	6V
Frequency - Transition	5GHz
Noise Figure (dB Typ @ f)	2.6dB ~ 1.9dB @ 1GHz
Gain	7dB ~ 10.5dB @ 1GHz
Power - Max	90mW
DC Current Gain (hFE) (Min) @ Ic, Vce	90 @ 1mA, 1V
Current - Collector (Ic) (Max)	15mA
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	SC-70, SOT-323
Supplier Device Package	3-MCP

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