NESG2107M33-T3-A related parameters_NESG2107M33-T3-A PDF documentation_CEL

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	5V
Frequency - Transition	10GHz
Noise Figure (dB Typ @ f)	0.9dB ~ 1.5dB @ 2GHz
Gain	7dB ~ 10dB
Power - Max	130mW
DC Current Gain (hFE) (Min) @ Ic, Vce	140 @ 5mA, 1V
Current - Collector (Ic) (Max)	100mA
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	3-SMD, Flat Lead
Supplier Device Package	3-SuperMiniMold (M33)

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