MRF392 related parameters_MRF392 PDF documentation_MACOM Technology Solutions

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Tray
Transistor Type	2 NPN (Dual) Common Emitter
Voltage - Collector Emitter Breakdown (Max)	30V
Frequency - Transition	-
Noise Figure (dB Typ @ f)	-
Gain	10dB
Power - Max	125W
DC Current Gain (hFE) (Min) @ Ic, Vce	40 @ 1A, 5V
Current - Collector (Ic) (Max)	16A
Operating Temperature	200°C (TJ)
Mounting Type	Chassis Mount
Package / Case	744A-01
Supplier Device Package	744A-01, Style 1

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