BFR840L3RHESDE6327XTSA1 related parameters_BFR840L3RHESDE6327XTSA1 PDF documentation_Infineon Technologies

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	2.6V
Frequency - Transition	75GHz
Noise Figure (dB Typ @ f)	0.5dB @ 450MHz
Gain	27dB
Power - Max	75mW
DC Current Gain (hFE) (Min) @ Ic, Vce	150 @ 10mA, 1.8V
Current - Collector (Ic) (Max)	35mA
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	SC-101, SOT-883
Supplier Device Package	PG-TSLP-3

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