NTE107 related parameters_NTE107 PDF documentation_NTE Electronics, Inc

Transistors - Bipolar - RF

The picture is for reference only

Please fill in the inquiry information for purchasing and consulting products

PartName*	Quantity*	Batch Number	Package	Manufacturer	Other requirements

Please fill in the contact details and reply to you in 3 minutes

In Stock：921(Ref. price)

Qty.	Unit Price	Ext. Price
1	$1.06700	$1.06700

Qty：

Add inquiry Quick quote

Related products

Documents

Specifications

Description	Details
Series	-
Package	Bag
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	12V
Frequency - Transition	2.1GHz
Noise Figure (dB Typ @ f)	6.5dB @ 60MHz
Gain	-
Power - Max	200mW
DC Current Gain (hFE) (Min) @ Ic, Vce	20 @ 8mA, 10V
Current - Collector (Ic) (Max)	25mA
Operating Temperature	100°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package	TO-92

Other

Price advantage, NTE107 is available in stock and can be delivered on the same day

Recommended Product

Part No	Manufacturer	Product Category	Datasheet	Description	Reference price	Quantity
2N5109	Microsemi Corporation	Transistors - Bipolar - RF	Datasheet	RF TRANS NPN 20V 1.2GHZ TO39	No price	In Stock:17638
2N2857	Microsemi Corporation	Transistors - Bipolar - RF	Datasheet	RF TRANS NPN 15V 500MHZ TO72	No price	In Stock:17640
KSC2786RTA	ON Semiconductor	Transistors - Bipolar - RF	Datasheet	RF TRANS NPN 20V 600MHZ TO92S	No price	In Stock:17642
NE66219-A	CEL	Transistors - Bipolar - RF	Datasheet	RF TRANS NPN 3.3V 21GHZ SOT523	No price	In Stock:17644
HFA3135IHZ96	Renesas Electronics America Inc	Transistors - Bipolar - RF	Datasheet	RF TRANS 2 PNP 9V 7GHZ SOT23-6	$5.42583	In Stock:17648