IXDF602SI related parameters_IXDF602SI PDF documentation_IXYS Integrated Circuits Division

Gate Drivers

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Specifications

Description	Details
Series	-
Package	Tube
Driven Configuration	Low-Side
Channel Type	Independent
Number of Drivers	2
Gate Type	IGBT, N-Channel, P-Channel MOSFET
Voltage - Supply	4.5V ~ 35V
Logic Voltage - VIL, VIH	0.8V, 3V
Current - Peak Output (Source, Sink)	2A, 2A
Input Type	Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap)	-
Rise / Fall Time (Typ)	7.5ns, 6.5ns
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154", 3.90mm Width) Exposed Pad
Supplier Device Package	8-SOIC-EP

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