DG636EEQ-T1-GE3 related parameters_DG636EEQ-T1-GE3 PDF documentation_Vishay Siliconix

Multiplexers、 Demultiplexers

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)
Switch Circuit	SPDT
Multiplexer/Demultiplexer Circuit	2:1
Number of Circuits	2
On-State Resistance (Max)	96Ohm
Channel-to-Channel Matching (ΔRon)	300mOhm
Voltage - Supply, Single (V+)	3V ~ 16V
Voltage - Supply, Dual (V±)	±3V ~ 8V
Switch Time (Ton, Toff) (Max)	46ns, 55ns
-3db Bandwidth	700MHz
Charge Injection	-0.33pC
Channel Capacitance (CS(off), CD(off))	3.7pF, 4.4pF
Current - Leakage (IS(off)) (Max)	1nA
Crosstalk	-62dB @ 1MHz
Operating Temperature	-40°C ~ 125°C (TA)
Mounting Type	Surface Mount
Package / Case	16-TSSOP (0.173", 4.40mm Width)
Supplier Device Package	16-TSSOP

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