2SK3796-3-TL-E related parameters_2SK3796-3-TL-E PDF documentation_ON Semiconductor

Transistors - JFETs

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Specifications

Description	Details
Series	-
Package	Bulk
FET Type	N-Channel
Voltage - Breakdown (V(BR)GSS)	-
Drain to Source Voltage (Vdss)	30 V
Current - Drain (Idss) @ Vds (Vgs=0)	1.2 mA @ 10 V
Current Drain (Id) - Max	10 mA
Voltage - Cutoff (VGS off) @ Id	180 mV @ 1 µA
Input Capacitance (Ciss) (Max) @ Vds	4pF @ 10V
Resistance - RDS(On)	200 Ohms
Power - Max	100 mW
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	SC-75, SOT-416
Supplier Device Package	SMCP

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