NTE456 related parameters_NTE456 PDF documentation_NTE Electronics, Inc

Transistors - JFETs

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Specifications

Description	Details
Series	-
Package	Bag
FET Type	N-Channel
Voltage - Breakdown (V(BR)GSS)	30 V
Drain to Source Voltage (Vdss)	30 V
Current - Drain (Idss) @ Vds (Vgs=0)	2 mA @ 15 V
Current Drain (Id) - Max	15 mA
Voltage - Cutoff (VGS off) @ Id	6 V @ 100 pA
Input Capacitance (Ciss) (Max) @ Vds	6pF @ 15V
Resistance - RDS(On)	400 Ohms
Power - Max	300 mW
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-206AF, TO-72-4 Metal Can
Supplier Device Package	TO-72

Other

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