BFR30LT1G related parameters_BFR30LT1G PDF documentation_ON Semiconductor

Transistors - JFETs

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)
FET Type	N-Channel
Voltage - Breakdown (V(BR)GSS)	-
Drain to Source Voltage (Vdss)	25 V
Current - Drain (Idss) @ Vds (Vgs=0)	4 mA @ 10 V
Current Drain (Id) - Max	-
Voltage - Cutoff (VGS off) @ Id	5 V @ 0.5 nA
Input Capacitance (Ciss) (Max) @ Vds	5pF @ 10V
Resistance - RDS(On)	-
Power - Max	225 mW
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Supplier Device Package	SOT-23-3 (TO-236)

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