MCH5908G-TL-E related parameters_MCH5908G-TL-E PDF documentation_ON Semiconductor

Transistors - JFETs

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Specifications

Description	Details
Series	-
Package	Bulk
FET Type	2 N-Channel (Dual)
Voltage - Breakdown (V(BR)GSS)	-
Drain to Source Voltage (Vdss)	-
Current - Drain (Idss) @ Vds (Vgs=0)	10 mA @ 5 V
Current Drain (Id) - Max	50 mA
Voltage - Cutoff (VGS off) @ Id	300 mV @ 100 µA
Input Capacitance (Ciss) (Max) @ Vds	10.5pF @ 5V
Resistance - RDS(On)	-
Power - Max	300 mW
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	5-SMD, Flat Leads
Supplier Device Package	5-MCPH

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