IXSH25N120A related parameters_IXSH25N120A PDF documentation_IXYS

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	-
Package	Tube
IGBT Type	-
Voltage - Collector Emitter Breakdown (Max)	1200 V
Current - Collector (Ic) (Max)	50 A
Current - Collector Pulsed (Icm)	80 A
Vce(on) (Max) @ Vge, Ic	4V @ 15V, 25A
Power - Max	200 W
Switching Energy	9.6mJ (off)
Input Type	Standard
Gate Charge	120 nC
Td (on/off) @ 25°C	100ns/450ns
Test Condition	960V, 25A, 18Ohm, 15V
Reverse Recovery Time (trr)	-
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-3
Supplier Device Package	TO-247AD (IXSH)

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