IXGQ20N120BD1 related parameters_IXGQ20N120BD1 PDF documentation_IXYS

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	-
Package	Tube
IGBT Type	-
Voltage - Collector Emitter Breakdown (Max)	1200 V
Current - Collector (Ic) (Max)	40 A
Current - Collector Pulsed (Icm)	100 A
Vce(on) (Max) @ Vge, Ic	3.4V @ 15V, 20A
Power - Max	190 W
Switching Energy	2.1mJ (off)
Input Type	Standard
Gate Charge	62 nC
Td (on/off) @ 25°C	20ns/270ns
Test Condition	960V, 20A, 10Ohm, 15V
Reverse Recovery Time (trr)	40 ns
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-3P-3, SC-65-3
Supplier Device Package	TO-3P

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