IXSH30N60CD1 related parameters_IXSH30N60CD1 PDF documentation_IXYS

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	-
Package	Bulk
IGBT Type	-
Voltage - Collector Emitter Breakdown (Max)	600 V
Current - Collector (Ic) (Max)	55 A
Current - Collector Pulsed (Icm)	110 A
Vce(on) (Max) @ Vge, Ic	2.5V @ 15V, 30A
Power - Max	200 W
Switching Energy	700µJ (off)
Input Type	Standard
Gate Charge	100 nC
Td (on/off) @ 25°C	30ns/90ns
Test Condition	480V, 30A, 4.7Ohm, 15V
Reverse Recovery Time (trr)	50 ns
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-3
Supplier Device Package	TO-247AD (IXSH)

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