IRG4BC30S related parameters_IRG4BC30S PDF documentation_Infineon Technologies

Transistors - IGBTs - Single

The picture is for reference only

Please fill in the inquiry information for purchasing and consulting products

PartName*	Quantity*	Batch Number	Package	Manufacturer	Other requirements

Please fill in the contact details and reply to you in 3 minutes

In Stock：19,766(Ref. price)

Qty.	Unit Price	Ext. Price
No price, please contact inquiry

Qty：

Add inquiry Quick quote

Related products

Documents

Specifications

Description	Details
Series	-
Package	Tube
IGBT Type	-
Voltage - Collector Emitter Breakdown (Max)	600 V
Current - Collector (Ic) (Max)	34 A
Current - Collector Pulsed (Icm)	68 A
Vce(on) (Max) @ Vge, Ic	1.6V @ 15V, 18A
Power - Max	100 W
Switching Energy	260µJ (on), 3.45mJ (off)
Input Type	Standard
Gate Charge	50 nC
Td (on/off) @ 25°C	22ns/540ns
Test Condition	480V, 18A, 23Ohm, 15V
Reverse Recovery Time (trr)	-
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-220-3
Supplier Device Package	TO-220AB

Other

Price advantage, IRG4BC30S is available in stock and can be delivered on the same day

Recommended Product

Part No	Manufacturer	Product Category	Datasheet	Description	Reference price	Quantity
IRG4BH20K-L	Infineon Technologies	Transistors - IGBTs - Single	Datasheet	IGBT 1200V 11A 60W TO262	No price	In Stock:18992
IKB30N65ES5ATMA1	Infineon Technologies	Transistors - IGBTs - Single	Datasheet	IKB30N65 - TRENCHSTOPT HIGH SPEE	$1.55800	In Stock:3014
NGTD23T120F2WP	ON Semiconductor	Transistors - IGBTs - Single	Datasheet	IGBT TRENCH FIELD STOP 1200V DIE	No price	In Stock:18996
IXYH40N65B3D1	IXYS	Transistors - IGBTs - Single	Datasheet	IGBT	$4.75728	In Stock:19002
FF450R12ME4	Infineon Technologies	Transistors - IGBTs - Single	Datasheet	INSULATED GATE BIPOLAR TRANSISTO	$143.8025	In Stock:2174