IXSP10N60B2D1 related parameters_IXSP10N60B2D1 PDF documentation_IXYS

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	-
Package	Bulk
IGBT Type	PT
Voltage - Collector Emitter Breakdown (Max)	600 V
Current - Collector (Ic) (Max)	20 A
Current - Collector Pulsed (Icm)	30 A
Vce(on) (Max) @ Vge, Ic	2.5V @ 15V, 10A
Power - Max	100 W
Switching Energy	430µJ (off)
Input Type	Standard
Gate Charge	17 nC
Td (on/off) @ 25°C	30ns/180ns
Test Condition	480V, 10A, 30Ohm, 15V
Reverse Recovery Time (trr)	25 ns
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-220-3
Supplier Device Package	TO-220AB

Other

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