IXBH28N170A related parameters_IXBH28N170A PDF documentation_IXYS

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	BIMOSFET™
Package	Tube
IGBT Type	-
Voltage - Collector Emitter Breakdown (Max)	1700 V
Current - Collector (Ic) (Max)	30 A
Current - Collector Pulsed (Icm)	60 A
Vce(on) (Max) @ Vge, Ic	6V @ 15V, 14A
Power - Max	300 W
Switching Energy	1.2mJ (off)
Input Type	Standard
Gate Charge	105 nC
Td (on/off) @ 25°C	35ns/265ns
Test Condition	850V, 14A, 10Ohm, 15V
Reverse Recovery Time (trr)	360 ns
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-3
Supplier Device Package	TO-247AD (IXBH)

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