STGD7NB120S-1 related parameters_STGD7NB120S-1 PDF documentation_STMicroelectronics

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	PowerMESH™
Package	Tube
IGBT Type	-
Voltage - Collector Emitter Breakdown (Max)	1200 V
Current - Collector (Ic) (Max)	10 A
Current - Collector Pulsed (Icm)	20 A
Vce(on) (Max) @ Vge, Ic	2.1V @ 15V, 7A
Power - Max	55 W
Switching Energy	15mJ (off)
Input Type	Standard
Gate Charge	29 nC
Td (on/off) @ 25°C	570ns/-
Test Condition	960V, 7A, 1kOhm, 15V
Reverse Recovery Time (trr)	-
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package	I-PAK

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