IXBH2N250 related parameters_IXBH2N250 PDF documentation_IXYS

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	BIMOSFET™
Package	Tube
IGBT Type	-
Voltage - Collector Emitter Breakdown (Max)	2500 V
Current - Collector (Ic) (Max)	5 A
Current - Collector Pulsed (Icm)	13 A
Vce(on) (Max) @ Vge, Ic	3.5V @ 15V, 2A
Power - Max	32 W
Switching Energy	-
Input Type	Standard
Gate Charge	10.6 nC
Td (on/off) @ 25°C	-
Test Condition	-
Reverse Recovery Time (trr)	920 ns
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-3
Supplier Device Package	TO-247AD (IXBH)

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