IXXK160N65C4 related parameters_IXXK160N65C4 PDF documentation_IXYS

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	GenX4™, XPT™
Package	Tube
IGBT Type	PT
Voltage - Collector Emitter Breakdown (Max)	650 V
Current - Collector (Ic) (Max)	290 A
Current - Collector Pulsed (Icm)	800 A
Vce(on) (Max) @ Vge, Ic	2.1V @ 15V, 160A
Power - Max	940 W
Switching Energy	3.5mJ (on), 1.3mJ (off)
Input Type	Standard
Gate Charge	422 nC
Td (on/off) @ 25°C	52ns/197ns
Test Condition	400V, 80A, 1Ohm, 15V
Reverse Recovery Time (trr)	-
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-264-3, TO-264AA
Supplier Device Package	TO-264 (IXXK)

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