RJH65T47DPQ-A0#T0 related parameters_RJH65T47DPQ-A0#T0 PDF documentation_Renesas Electronics America Inc

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	-
Package	Tube
IGBT Type	Trench
Voltage - Collector Emitter Breakdown (Max)	650 V
Current - Collector (Ic) (Max)	90 A
Current - Collector Pulsed (Icm)	-
Vce(on) (Max) @ Vge, Ic	2.4V @ 15V, 45A
Power - Max	375 W
Switching Energy	520µJ (on), 560µJ (off)
Input Type	Standard
Gate Charge	127 nC
Td (on/off) @ 25°C	45ns/190ns
Test Condition	400V, 45A, 10Ohm, 15V
Reverse Recovery Time (trr)	100 ns
Operating Temperature	175°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-3
Supplier Device Package	TO-247A

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