IXGB75N60BD1 related parameters_IXGB75N60BD1 PDF documentation_IXYS

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	HiPerFAST™
Package	Tube
IGBT Type	-
Voltage - Collector Emitter Breakdown (Max)	600 V
Current - Collector (Ic) (Max)	120 A
Current - Collector Pulsed (Icm)	300 A
Vce(on) (Max) @ Vge, Ic	2.3V @ 15V, 75A
Power - Max	360 W
Switching Energy	3.3mJ (off)
Input Type	Standard
Gate Charge	248 nC
Td (on/off) @ 25°C	62ns/220ns
Test Condition	480V, 75A, 5Ohm, 15V
Reverse Recovery Time (trr)	50 ns
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-264-3, TO-264AA
Supplier Device Package	PLUS264™

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