IXGF32N170 related parameters_IXGF32N170 PDF documentation_IXYS

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	-
Package	Tube
IGBT Type	NPT
Voltage - Collector Emitter Breakdown (Max)	1700 V
Current - Collector (Ic) (Max)	44 A
Current - Collector Pulsed (Icm)	200 A
Vce(on) (Max) @ Vge, Ic	3.5V @ 15V, 32A
Power - Max	200 W
Switching Energy	10.6mJ (off)
Input Type	Standard
Gate Charge	146 nC
Td (on/off) @ 25°C	45ns/270ns
Test Condition	1020V, 32A, 2.7Ohm, 15V
Reverse Recovery Time (trr)	-
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	i4-Pac™-5 (3 Leads)
Supplier Device Package	ISOPLUS i4-PAC™

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