FGAF40S65AQ related parameters_FGAF40S65AQ PDF documentation_ON Semiconductor

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	-
Package	Tube
IGBT Type	Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)	650 V
Current - Collector (Ic) (Max)	80 A
Current - Collector Pulsed (Icm)	160 A
Vce(on) (Max) @ Vge, Ic	2.1V @ 15V, 40A
Power - Max	94 W
Switching Energy	132µJ (on), 62µJ (off)
Input Type	Standard
Gate Charge	75 nC
Td (on/off) @ 25°C	17.8ns/81.6ns
Test Condition	400V, 10A, 6Ohm, 15V
Reverse Recovery Time (trr)	274 ns
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-3P-3 Full Pack
Supplier Device Package	TO-3PF-3

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