RGT8NS65DGC9 related parameters_RGT8NS65DGC9 PDF documentation_Rohm Semiconductor

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	-
Package	Tube
IGBT Type	Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)	650 V
Current - Collector (Ic) (Max)	8 A
Current - Collector Pulsed (Icm)	12 A
Vce(on) (Max) @ Vge, Ic	2.1V @ 15V, 4A
Power - Max	65 W
Switching Energy	-
Input Type	Standard
Gate Charge	13.5 nC
Td (on/off) @ 25°C	17ns/69ns
Test Condition	400V, 4A, 50Ohm, 15V
Reverse Recovery Time (trr)	40 ns
Operating Temperature	-40°C ~ 175°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package	TO-262

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