IXGN200N170 related parameters_IXGN200N170 PDF documentation_IXYS

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	-
Package	Tube
IGBT Type	-
Voltage - Collector Emitter Breakdown (Max)	1700 V
Current - Collector (Ic) (Max)	280 A
Current - Collector Pulsed (Icm)	1050 A
Vce(on) (Max) @ Vge, Ic	2.6V @ 15V, 100A
Power - Max	1250 W
Switching Energy	28mJ (on), 30mJ (off)
Input Type	Standard
Gate Charge	540 nC
Td (on/off) @ 25°C	37ns/320ns
Test Condition	850V, 100A, 1Ohm, 15V
Reverse Recovery Time (trr)	133 ns
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Chassis Mount
Package / Case	SOT-227-4, miniBLOC
Supplier Device Package	SOT-227B

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