IXGH30N120B3D1 related parameters_IXGH30N120B3D1 PDF documentation_IXYS

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	GenX3™
Package	Tube
IGBT Type	PT
Voltage - Collector Emitter Breakdown (Max)	1200 V
Current - Collector (Ic) (Max)	-
Current - Collector Pulsed (Icm)	150 A
Vce(on) (Max) @ Vge, Ic	3.5V @ 15V, 30A
Power - Max	300 W
Switching Energy	3.47mJ (on), 2.16mJ (off)
Input Type	Standard
Gate Charge	87 nC
Td (on/off) @ 25°C	16ns/127ns
Test Condition	960V, 30A, 5Ohm, 15V
Reverse Recovery Time (trr)	100 ns
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-3
Supplier Device Package	TO-247AD (IXGH)

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