STGD3NB60HDT4 related parameters_STGD3NB60HDT4 PDF documentation_STMicroelectronics

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	PowerMESH™
Package	Tape & Reel (TR)
IGBT Type	-
Voltage - Collector Emitter Breakdown (Max)	600 V
Current - Collector (Ic) (Max)	10 A
Current - Collector Pulsed (Icm)	24 A
Vce(on) (Max) @ Vge, Ic	2.8V @ 15V, 3A
Power - Max	50 W
Switching Energy	33µJ (off)
Input Type	Standard
Gate Charge	21 nC
Td (on/off) @ 25°C	5ns/53ns
Test Condition	480V, 3A, 10Ohm, 15V
Reverse Recovery Time (trr)	95 ns
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package	DPAK

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