STGD6NC60H-1 related parameters_STGD6NC60H-1 PDF documentation_STMicroelectronics

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	PowerMESH™
Package	Tube
IGBT Type	-
Voltage - Collector Emitter Breakdown (Max)	600 V
Current - Collector (Ic) (Max)	15 A
Current - Collector Pulsed (Icm)	21 A
Vce(on) (Max) @ Vge, Ic	2.5V @ 15V, 3A
Power - Max	62.5 W
Switching Energy	20µJ (on), 68µJ (off)
Input Type	Standard
Gate Charge	13.6 nC
Td (on/off) @ 25°C	12ns/76ns
Test Condition	390V, 3A, 10Ohm, 15V
Reverse Recovery Time (trr)	-
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package	IPAK (TO-251)

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