IXYA20N120B4HV related parameters_IXYA20N120B4HV PDF documentation_IXYS

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	GenX4™, XPT™
Package	Tube
IGBT Type	PT
Voltage - Collector Emitter Breakdown (Max)	1200 V
Current - Collector (Ic) (Max)	76 A
Current - Collector Pulsed (Icm)	130 A
Vce(on) (Max) @ Vge, Ic	2.1V @ 15V, 20A
Power - Max	375 W
Switching Energy	3.9mJ (on), 1.6mJ (off)
Input Type	Standard
Gate Charge	44 nC
Td (on/off) @ 25°C	15ns/200ns
Test Condition	960mV, 20A, 10Ohm, 15V
Reverse Recovery Time (trr)	47 ns
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package	TO-263HV

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