FGY60T120SQDN related parameters_FGY60T120SQDN PDF documentation_ON Semiconductor

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	-
Package	Tube
IGBT Type	-
Voltage - Collector Emitter Breakdown (Max)	1200 V
Current - Collector (Ic) (Max)	120 A
Current - Collector Pulsed (Icm)	240 A
Vce(on) (Max) @ Vge, Ic	1.95V @ 15V, 60A
Power - Max	517 W
Switching Energy	-
Input Type	Standard
Gate Charge	311 nC
Td (on/off) @ 25°C	52ns/296ns
Test Condition	600V, 60A, 10Ohm, 15V
Reverse Recovery Time (trr)	-
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-3 Variant
Supplier Device Package	TO-247-3

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