IXYH55N120A4 related parameters_IXYH55N120A4 PDF documentation_IXYS

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	-
Package	Tube
IGBT Type	PT
Voltage - Collector Emitter Breakdown (Max)	1200 V
Current - Collector (Ic) (Max)	175 A
Current - Collector Pulsed (Icm)	350 A
Vce(on) (Max) @ Vge, Ic	1.8V @ 15V, 55A
Power - Max	650 W
Switching Energy	2.3mJ (on), 5.3mJ (off)
Input Type	Standard
Gate Charge	110 nC
Td (on/off) @ 25°C	23ns/300ns
Test Condition	600V, 40A, 5Ohm, 15V
Reverse Recovery Time (trr)	35 ns
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-3
Supplier Device Package	TO-247 (IXYH)

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