IXGJ40N60C2D1 related parameters_IXGJ40N60C2D1 PDF documentation_IXYS

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	HiPerFAST™
Package	Tube
IGBT Type	PT
Voltage - Collector Emitter Breakdown (Max)	600 V
Current - Collector (Ic) (Max)	75 A
Current - Collector Pulsed (Icm)	200 A
Vce(on) (Max) @ Vge, Ic	2.7V @ 15V, 30A
Power - Max	300 W
Switching Energy	200µJ (off)
Input Type	Standard
Gate Charge	95 nC
Td (on/off) @ 25°C	18ns/90ns
Test Condition	400V, 30A, 3Ohm, 15V
Reverse Recovery Time (trr)	25 ns
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-220-3, Short Tab
Supplier Device Package	TO-268

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