IXXH80N65B4H1 related parameters_IXXH80N65B4H1 PDF documentation_IXYS

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	GenX4™, XPT™
Package	Tube
IGBT Type	PT
Voltage - Collector Emitter Breakdown (Max)	650 V
Current - Collector (Ic) (Max)	160 A
Current - Collector Pulsed (Icm)	430 A
Vce(on) (Max) @ Vge, Ic	2V @ 15V, 80A
Power - Max	625 W
Switching Energy	3.77mJ (on), 1.2mJ (off)
Input Type	Standard
Gate Charge	120 nC
Td (on/off) @ 25°C	38ns/120ns
Test Condition	400V, 80A, 3Ohm, 15V
Reverse Recovery Time (trr)	150 ns
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-3
Supplier Device Package	TO-247 (IXXH)

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