IXXH50N60B3D1 related parameters_IXXH50N60B3D1 PDF documentation_IXYS

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	GenX3™, XPT™
Package	Tube
IGBT Type	PT
Voltage - Collector Emitter Breakdown (Max)	600 V
Current - Collector (Ic) (Max)	120 A
Current - Collector Pulsed (Icm)	200 A
Vce(on) (Max) @ Vge, Ic	1.8V @ 15V, 36A
Power - Max	600 W
Switching Energy	670µJ (on), 740µJ (off)
Input Type	Standard
Gate Charge	70 nC
Td (on/off) @ 25°C	27ns/100ns
Test Condition	360V, 36A, 5Ohm, 15V
Reverse Recovery Time (trr)	25 ns
Operating Temperature	-
Mounting Type	Through Hole
Package / Case	TO-247-3
Supplier Device Package	TO-247 (IXXH)

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