IXYX110N120A4 related parameters_IXYX110N120A4 PDF documentation_IXYS

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	XPT™, GenX4™
Package	Tube
IGBT Type	PT
Voltage - Collector Emitter Breakdown (Max)	1200 V
Current - Collector (Ic) (Max)	375 A
Current - Collector Pulsed (Icm)	900 A
Vce(on) (Max) @ Vge, Ic	1.8V @ 15V, 110A
Power - Max	1360 W
Switching Energy	2.5mJ (on), 8.4mJ (off)
Input Type	Standard
Gate Charge	305 nC
Td (on/off) @ 25°C	42ns/550ns
Test Condition	600V, 50A, 1.5Ohm, 15V
Reverse Recovery Time (trr)	-
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-3
Supplier Device Package	PLUS247 (IXYX)

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