IXGC16N60B2D1 related parameters_IXGC16N60B2D1 PDF documentation_IXYS

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	HiPerFAST™
Package	Tube
IGBT Type	PT
Voltage - Collector Emitter Breakdown (Max)	600 V
Current - Collector (Ic) (Max)	28 A
Current - Collector Pulsed (Icm)	100 A
Vce(on) (Max) @ Vge, Ic	2.3V @ 15V, 12A
Power - Max	63 W
Switching Energy	150mJ (off)
Input Type	Standard
Gate Charge	32 nC
Td (on/off) @ 25°C	25ns/70ns
Test Condition	400V, 12A, 22Ohm, 15V
Reverse Recovery Time (trr)	110 ns
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	ISOPLUS220™
Supplier Device Package	ISOPLUS220™

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