STGB10NB37LZ related parameters_STGB10NB37LZ PDF documentation_STMicroelectronics

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	PowerMESH™
Package	Tube
IGBT Type	-
Voltage - Collector Emitter Breakdown (Max)	440 V
Current - Collector (Ic) (Max)	20 A
Current - Collector Pulsed (Icm)	40 A
Vce(on) (Max) @ Vge, Ic	1.8V @ 4.5V, 10A
Power - Max	125 W
Switching Energy	2.4mJ (on), 5mJ (off)
Input Type	Standard
Gate Charge	28 nC
Td (on/off) @ 25°C	1.3µs/8µs
Test Condition	328V, 10A, 1kOhm, 5V
Reverse Recovery Time (trr)	-
Operating Temperature	-65°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package	D2PAK

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